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November 2013
F DB5800
N-Channel Logic Level PowerTrench ? MOSFET
6 0 V, 80 A, 6 m Ω
Features
? R DS(on) = 4.6 m ? (Typ.), V GS = 10 V, I D = 80 A
? High Performance Trench Technology for Extermly
Low R DS(on)
? Low Gate Charge
? High Power and Current Handing Capability
? RoHs Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench ? process
that has been tailored to minimize the on-state
resistance while maintaining superior switching
performance.
Applications
? Power tools
? Motor drives and Uninterruptible Power Supplies
D
D
G
S
D 2 -PAK
G
S
= 25 C unless otherwise noted.
Absolute Maximum Ratings T
C
o
- Continuous (T C < 90 C, V GS = 5 V)
Symbol
V DSS
V GS
I D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
- Continuous (T C < 102 o C, V GS = 10 V)
o
- Continuous (T amb = 25 o C, V GS = 10V, with R θ JA = 43 o C/W)
- Pulsed
FDB5800
60
± 20
80
80
14
Figure 4
Unit
V
V
A
A
A
A
C
E AS
P D
T J , T STG
Single Pulse Avalanche Energy
- Power Dissipation
- Derate above 25 o C
- Operating and Storage Temperature
(Note 1)
652
242
1.61
-55 to 175
mJ
W
W/ o C
o
Thermal Characteristics
Thermal Resistance Junction to Ambient TO-263, 1in copper pad area
C/W
R θ JC
R θ JA
R θ JA
Thermal Resistance Junction to Case TO-263, Max.
Thermal Resistance Junction to Ambient TO-263, Max. ( Note 2)
2
0.62
62.5
43
o C/W
o C/W
o
?200 5 Fairchild Semiconductor Corporation
FDB5800 Rev. C2
1
www.fairchildsemi.com
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